Prasad, G.M. (1992) Microhardness of AN−1 BN + 1 C28−N Chalcopyrite Semiconductors. physica status solidi, 170 (1). pp. 77-80.

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Abstract

Microhardness of AN−1 BN + 1 C28−N (N = 2, 3) tetrahedrally coordinated chalcopyrite semiconductors are calculated using plasma oscillation theory of solids. The calculated values are in fair agreement with the values reported by several workers and the experimental values. Mit der Plasmaschwingungstheorie der Festkörper wird die Mikrohärte von tetraedrisch koordinierten AN−1 BN + 1 C28−N (N = 2, 3)-Chalkopyrithalbleiter berechnet. Die berechneten Werte stimmen mit Werten, die von anderen Autoren angegeben werden und mit experimentellen Daten gut überein.

Item Type:	Article
Subjects:	Instrumentation
Divisions:	UNSPECIFIED
Depositing User:	Dr. Satyendra Kumar Singh
Date Deposited:	02 Feb 2012 12:35
Last Modified:	02 Feb 2012 12:35
URI:	http://cimfr.csircentral.net/id/eprint/850

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