Singh, Jitendra Kumar and Prasad, G.M. (2015) Elastic properties of elemental, binary and ternary semiconductor materials. Indian Journal of Pure & Applied Physics, 53. pp. 429-435. ISSN 0019-5396

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Abstract

Elastic properties of elemental (C, Si, Ge), binary (II-VI, III-V and ternary ( I-III-VI2, II-VI-V2) semiconductors have been studied. New relations, based on plasma oscillation theory of solids, have been proposed for the calculation of bulk modulus (B), microhardnesss (H) and shear modulus (G) of these materials. The values of B, H, G and G/B ratio have been calculated for 13 new compounds of II-IV-V2 family. The calculated values are compared with the available experimental and reported values. Reasonably good agreement has been obtained between them. The average percentage deviation of proposed relations has also been estimated and found to be better than earlier correlations.

Item Type:	Article
Uncontrolled Keywords:	Bulk modulus, Microhardness, Shear modulus, Elastic properties, Plasma energy, Elemental, Binary and ternary semiconductors
Subjects:	Flame Proof Laboratory
Divisions:	UNSPECIFIED
Depositing User:	Mr. B. R. Panduranga
Date Deposited:	05 May 2017 11:27
Last Modified:	05 May 2017 11:27
URI:	http://cimfr.csircentral.net/id/eprint/1725

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